Datasheet4U Logo Datasheet4U.com

SSS10R20DFU - MOSFET

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet Details

Part number SSS10R20DFU
Manufacturer Silikron
File Size 617.20 KB
Description MOSFET
Datasheet download datasheet SSS10R20DFU Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSS1004 N-Channel enhancement mode power field effect transistors Silikron Semiconductor
SSS1004 N-Channel MOSFET GOOD-ARK
SSS1004A7 N-Channel enhancement mode power field effect transistors Silikron Semiconductor
SSS10N60 N-CHANNEL MOSFET Tuofeng
SSS10N60A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by Silikron

Part Number Description
SSS10R20BFU MOSFET
SSS1004AL MOSFET
SSS1004L MOSFET
SSS1510J7 MOSFET
SSS4008J8L MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics: VDSS 100V RDS(on) 13.8mΩ (typ.) ID 30A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSS10R20DFU Marking and Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.