SSS10R20BFU - MOSFET

Silikron

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

Low RDS(on) & FOM.
Extremely low switching loss.
Excellent stability and uniformity.
Fast switching and reverse body recovery.
150℃ operating temperature.

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SSS10R20BFU mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	SSS10R20BFU
Manufacturer	Silikron
File Size	621.61 KB
Description	MOSFET
Datasheet	SSS10R20BFU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics VDSS 100V RDS(on) 17mΩ (typ.) ID 8A ① Features and Benefits  Low RDS(on) & FOM  Extremely low switching loss  Excellent stability and uniformity  Fast switching and reverse body recovery  150℃ operating temperature Applications  Consumer electronic power supply  Motor control  Synchronous-rectification  Isolated DC/DC convertor SOP-8 SSS10R20BFU Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.