SSS10R20BFU Datasheet | Silikron

Features and Benefits - Low RDS(on) & FOM - Extremely low switching loss - Excellent stability and uniformity - Fast switching and reverse body recovery - 150℃ operating temperature Applications - Consumer electronic power supply - Motor control - Synchronous-rectification - Isolated DC/DC convertor SOP-8 Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5m H Avalanche Current @ L=0.5m H Operating Junction and Storage Temperature Range Max. 8 32 3.5 100 ± 20 42 13 -55 to +150 Units W V V m J A °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: 1.0 page 1 of 6 Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ. - Max. 35.7 Units °C/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS Gate threshold voltage Drain-to-Source leakage current IGSS Gate-to-Source forward...