SSS1510J7 Datasheet | Silikron

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Description : It utilizes the latestprocessing techniquesto achieve the high cell density and reduces the on-resistancewith high repetitiveavalanche rating. These features bine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof otherapplications. Absolute Max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Operating Junction and Storage Temperature Range Max. 80 240 160 150 ± 20 80 -55 to +150 Units W V V m J °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: Preliminary page1of8 Thermal Resistance Symbol RθJC Characterizes Junction-to-case③ Typ. - Max. 0.78 Units ℃/W Electrical Characterizes@TA=25℃unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfercapacitance Min. 150 - 3 - - - - - - - - - - - -...