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SSS4N60 - N-CHANNEL MOSFET

General Description

The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • RDS(ON) =2.5Ω@VGS=10V Ultra Low gate charge(tupical 15.0nC) Low reverse transfer capacitance(CRSS =typica8.0pF) Fast switching capability Avalanche energy specified Improved dv/dt capability,high ruggedness 4N60.
  • SYMBOL.

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Datasheet Details

Part number SSS4N60
Manufacturer Tuofeng Semiconductor
File Size 478.45 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SSS4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Technology co.,Ltd SSS4N60 4 Amps，600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits. ■ ● ● ● ● ● ● FEATURES RDS(ON) =2.5Ω@VGS=10V Ultra Low gate charge(tupical 15.0nC) Low reverse transfer capacitance(CRSS =typica8.