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SSS2N60 - N-CHANNEL MOSFET

General Description

The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • RDS(ON)=3.8Ω@VGS=10V.
  • Ultra Low gate charge(tupical 9.0nC).
  • Low reverse transfer capacitance(Crss=typical 5.0pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability,high ruggedness.
  • SYMBOL.

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Datasheet Details

Part number SSS2N60
Manufacturer Tuofeng Semiconductor
File Size 1.07 MB
Description N-CHANNEL MOSFET
Datasheet download datasheet SSS2N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 2 Amps,600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to .DC converters and bridge circuits ■ FEATURES ● RDS(ON)=3.8Ω@VGS=10V ● Ultra Low gate charge(tupical 9.0nC) ● Low reverse transfer capacitance(Crss=typical 5.