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SSS2301A - P-Channel MOSFET

Key Features

  • Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S.

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Datasheet Details

Part number SSS2301A
Manufacturer South Sea Semiconductor
File Size 128.68 KB
Description P-Channel MOSFET
Datasheet download datasheet SSS2301A Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -20V SOT-23 D ID (A) -2.3A RDS(ON) (mΩ) Max 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + -8 -2.3 -8 -1.25 1.