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SSS2323 - P-Channel MOSFET

Key Features

  • Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S.

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Datasheet Details

Part number SSS2323
Manufacturer South Sea Semiconductor
File Size 165.92 KB
Description P-Channel MOSFET
Datasheet download datasheet SSS2323 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSS2323 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) 35 @VGS = -4.5V -20V -4A 55 @VGS = -2.5V 100 @VGS = -1.8V G S D SOT-23 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o Symbol VDS VGS ID IDM a Limit -20 + - 10 -4 -14 -1.7 1.