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SSS2321
P-Channel Enhancement Mode MOSFET
SOT-23
D
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 60 @VGS = -4.5V
G
21 23
YW
-20V
-3.4A
80 @VGS = -2.5V 125 @VGS = -1.8V
S
D
FEATURES
ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free.
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-20 + -8 -3.4 -12 -0.74 0.