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SSS2308
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
SOT-23
80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V
G S
D
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 10 2.3 10 1.25 1.