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SSS8N60 - N-CHANNEL MOSFET

Key Features

  • zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product F 1/7 Shenzhen Tuofeng Semiconductor Technology Co. , Ltd.

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Datasheet Details

Part number SSS8N60
Manufacturer Tuofeng Semiconductor
File Size 575.92 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SSS8N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS8N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC Package z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 23pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product F 1/7 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLUTE RATINGS (Tc=25℃) SSS8N60 Parameter － Drain-Source Voltage Symbol VDSS Value JCS8N60S/B/C JCS8N60F 600 600 Unit V Drain Current -continuous ID T=25℃ 7.5 7.