SSS8504AL Datasheet | Silikron

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Marking and Pin Assignments Schematic Diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5m H Operating Junction and Storage Temperature Range Max. 120 480 220 85 ± 20 560 -55 to +150 Units W V V m J °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : Preliminary page 1 of 7 Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Thermal Resistance Junction-Ambient Typ. - - Max. 0.7 58 Units ℃/W ℃/W Electrical Characteristics @TA=25℃unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance - VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current - - IGSS Gate-to-Source forward...