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SSS2N60B 600V N-Channel MOSFET

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Description

www.DataSheet4U.com SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number
SSS2N60B
Manufacturer
Fairchild Semiconductor
File Size
0.98 MB
Datasheet
SSS2N60B_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

Features

* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Ser

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