* Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + - 10 -2.3 -
SSS2309
South Sea Semiconductor
76.90 KB
P-channel mosfet.
SSS2309
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 130 @VGS = -4.5V -20V -2.3A 190 @VGS = -2.5V
G S D
SOT-23
.
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