SSS1206H

N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSS1206H Features

* TO-247

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSS1206H Marking and p

SSS1206H General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other .

SSS1206H Datasheet (333.55 KB)