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SSS1206H N-Channel enhancement mode power field effect transistors

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Description

                                 Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Features

* TO-247 
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSS1206H Distributors

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SSS1206H N-Channel enhancement mode power field effect transistors Silikron Semiconductor
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