SSS4N60B Datasheet - Fairchild Semiconductor

Straight 1-Row BergStik II Headers

SSS4N60B Features

* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Ser

SSS4N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSS4N60B Datasheet (890.06 KB)

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SSS4N60B

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Fairchild Semiconductor

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Straight 1-row bergstik ii headers.

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SSS4N60B Straight 1-Row BergStik Headers Fairchild Semiconductor

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SSS4N60B Features

SSS4N60B General Description

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