UT3N06G-AE3-R N-Channel MOSFET

VBsemi

Description

UT3N06G-AE3-R N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4.5 V ID (A)a.

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Datasheet Specifications

Part number: UT3N06G-AE3-R
Manufacturer: VBsemi
File Size: 244.24 KB
Datasheet: UT3N06G-AE3-R-VBsemi.pdf
Description: N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* Battery Switch
* DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pul

UT3N06G-AE3-R Distributors

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UT3N06G-AE3-R N-Channel MOSFET VBsemi

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