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VBC6N2014 Dual N-Channel MOSFET

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Description

VBC6N2014 Dual N-Channel MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.014 at VGS = 4.5 V 20 0.018 at VGS = 2.5 V ID (A) 7.6 6.5 .

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Datasheet Specifications

Part number
VBC6N2014
Manufacturer
VBsemi
File Size
253.64 KB
Datasheet
VBC6N2014-VBsemi.pdf
Description
Dual N-Channel MOSFET

Features

* Halogen-free Option Available
* TrenchFET® Power MOSFETs Pb-free Available RoHS
* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit D

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