* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
* Low Thermal Resistance Package Available RoHS
* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS G
VBE1104N Datasheet (265.90 KB)
VBE1104N
VBsemi
265.90 KB
N-channel mosfet.
VBE1104N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID.
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