VBE1106N Overview
VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.) 21nC.
VBE1106N Key Features
- TrenchFET® power MOSFET
- 100 % UIS tested
Datasheet Details
| Part number | VBE1106N |
|---|---|
| Datasheet | VBE1106N-VBsemi.pdf |
| File Size | 251.90 KB |
| Manufacturer | VBsemi |
| Description | N-Channel MOSFET |
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