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VBE1106N
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.055 at VGS = 10 V
100
0.057 at VGS = 4.5 V
ID (A) 25 25
Qg (Typ.) 21nC
FEATURES • TrenchFET® power MOSFET • 100 % UIS tested
TO-252
APPLICATIONS
D
• Primary side switch
www.VBsemi.com
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.
VBE1106N Datasheet
