VBE1106N Description
VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.) 21nC.
VBE1106N Key Features
- TrenchFET® power MOSFET
- 100 % UIS tested
- Part: VBE1106N
- Manufacturer: VBsemi
- Size: 251.90 KB
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