VBE1104N Description
VBE1104N N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A) 40.
VBE1104N Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- Low Thermal Resistance Package