VBE1308
VBE1308 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg and UIS Tested
APPLICATIONS
- Synchronous Rectification
- Power Supplies
Ro HS
PLIANT
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.1 m H
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit...
