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VBE1106N N-Channel MOSFET

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Description

VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.).

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Datasheet Specifications

Part number
VBE1106N
Manufacturer
VBsemi
File Size
251.90 KB
Datasheet
VBE1106N-VBsemi.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® power MOSFET

Applications

* D
* Primary side switch www. VBsemi. com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Continuous Source-Drain Diode

VBE1106N Distributors

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N-Channel MOSFET VBsemi
VBsemi VBE1106N-like datasheet