* TrenchFET® power MOSFET
* 100 % UIS tested TO-252 APPLICATIONS D
* Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Contin
VBE1106N Datasheet (251.90 KB)
VBE1106N
VBsemi
251.90 KB
N-channel mosfet.
VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.).
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