VBE1203M Datasheet - VBsemi

datasheet Preview Page 1 from Datasheet4u.com

VBE1203M N-Channel MOSFET

VBE1203M N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 .

VBE1203M-VBsemi.pdf

VBE1203M Datasheet Preview — Preview of VBE1203M PDF

Datasheet Details

Part number:

VBE1203M

Manufacturer:

VBsemi

File Size:

286.92 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuou

VBE1203M Distributors

📁 Related Datasheet

VBE100-12NO7 VBE17-06NO7 VBE17-12NO7 VBE20 VBE55-06NO7 VBE60-06A

📌 All Tags

VBE1203M N-Channel MOSFET VBsemi

VBsemi VBE1203M-like datasheet