Datasheet Specifications
- Part number
- VBE1203M
- Manufacturer
- VBsemi
- File Size
- 286.92 KB
- Datasheet
- VBE1203M-VBsemi.pdf
- Description
- N-Channel MOSFET
Description
VBE1203M N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 .
Features
* TrenchFET® Power MOSFETApplications
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM ContinuouVBE1203M Distributors
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