VBFB1104N Datasheet - VBsemi

VBFB1104N, N-Channel MOSFET

VBFB1104N N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.036 at VGS= 10 V ID (A) 35 TO-251 D .

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Datasheet Details

Part number:

VBFB1104N

Manufacturer:

VBsemi

File Size:

271.21 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Co

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