VBFB1206N Datasheet - VBsemi

VBFB1206N N-Channel MOSFET

VBFB1206N Features

* TrenchFET® Power MOSFET

* 175 °C Junction Temperature

* PWM Optimized

* 100 % Rg Tested

* Compliant to RoHS Directive 2002/95/EC APPLICATIONS

* Primary Side Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Datasheet Details

VBFB1206N

VBsemi

336.10 KB

N-channel mosfet.

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