* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuou
VBG3316
VBsemi
215.44 KB
Dual n-channel mosfet.
VBG3316 www.VBsemi.com Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) .
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