* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* High Frequency Boost Converter
* LED Backlight for LCD TV D HVMDIP S G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS G
VBGC1101M Datasheet (237.90 KB)
VBGC1101M
VBsemi
237.90 KB
N-channel mosfet.
VBGC1101M N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4..
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