VBGC1101M Datasheet - VBsemi

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VBGC1101M N-Channel MOSFET

VBGC1101M N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4..

VBGC1101M-VBsemi.pdf

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Datasheet Details

Part number:

VBGC1101M

Manufacturer:

VBsemi

File Size:

237.90 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* High Frequency Boost Converter
* LED Backlight for LCD TV D HVMDIP S G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C

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VBGC1101M N-Channel MOSFET VBsemi

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