* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested Top View S D G APPLICATIONS D
* Power supply - Secondary synchronous rectification
* DC/DC c
VBM1803
VBsemi
695.97 KB
N-channel mosfet.
VBM1803 www.VBsemi.com N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 80 0.0028 at VGS = 10 V 0.0030 at VGS = 7.5 V ID .
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