* Trench power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested Top View S D G APPLICATIONS D
* Power supply - Secondary synchronous rectification
* DC/DC conve
VS150N08BT Datasheet (209.01 KB)
VS150N08BT
VBsemi
209.01 KB
N-channel 80v mosfet.
VS150N08BT-VB VS150N08BT-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 80 0.0028 at VGS = 10 .
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