Description
1N6492, 1N6492U4 Silicon Schottky Barrier Diode .
The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.
Features
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567
* Extremely Low Forward Voltage and Reverse Leakage
* Reverse Breakdown Voltage: 45 V
* Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4
Applications
* The 1N6492 is designed to be used in a wide variety of applications, such as low voltage, high efficiency high reliability switching power supplies. Rev. V1
Electrical Specifications: TA = +25°C (unless otherwise specified)
Symbol
Reverse Leakage Current
VRM = 45 V (pk)
IRM1
mA
* 2.
