1N6844U3 Datasheet - VPT

1N6844U3 Silicon Schottky Barrier Diode

The 1N6844U3 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard U3 hermetically sealed surface m.

1N6844U3 Features

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/679

* Low Forward Voltage and Reverse Leakage

* Reverse Breakdown Voltage: 100 V

* Hermetically Sealed, Low Profile Ceramic SMD0.5 package (U3)

* High Surge Capability

* Low Capacitance Descr

1N6844U3-VPT.pdf