Description
JANHCD2N3500, JANHCD2N3501 JANKCD2N3500, JANKCD2N3501 NPN Medium Power Silicon Transistor Die .
Features
* Available in JANHC, JANKC and R versions per MIL-PRF-19500/366
* Rad Hard Assurance Levels M, D, P, L and R
Applications
* Rev. V1
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min. Max. Collector - Emitter Breakdown Voltage
IC = 10 mA dc
V(BR)CEO V dc
150
* Collector - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Cu