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JAN2N1711 Datasheet - Microsemi Corporation

JAN2N1711 NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices www.DataSheet4U.com Qualified Level 2N1890 JAN JANTX 2N1711 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 75 2N1890 100 Unit Vdc Vdc mAdc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 7.0 500 0.8 3.0 -65 to +200 Max. 58 THERMAL CHARACT.

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Datasheet Details

Part number:

JAN2N1711

Manufacturer:

Microsemi ↗ Corporation

File Size:

85.46 KB

Description:

Npn low power silicon transistor.

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