Datasheet4U Logo Datasheet4U.com

VG36641641BT Datasheet - Vanguard International Semiconductor

CMOS Synchronous Dynamic RAM

VG36641641BT Features

* Single 3.3V ( ± 0.3V ) power supply

* High speed clock cycle time : 8/10ns

* Fully synchronous with all signals referenced to a positive clock edge

* Programmable CAS Iatency (2,3)

* Programmable burst length (1,2,4,8,&Full page)

* Programmable wrap

VG36641641BT General Description

Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC stand.

VG36641641BT Datasheet (974.34 KB)

Preview of VG36641641BT PDF

Datasheet Details

Part number:

VG36641641BT

Manufacturer:

Vanguard International Semiconductor

File Size:

974.34 KB

Description:

Cmos synchronous dynamic ram.

📁 Related Datasheet

VG36641641DT CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG3664321412BT CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36643241BT-10 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36643241BT-7 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36643241BT-8 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36644041DT CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36646141BT-10 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36646141BT-7 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36646141BT-8 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

VG36648041BT-10 CMOS Synchronous Dynamic RAM (Vanguard International Semiconductor)

TAGS

VG36641641BT CMOS Synchronous Dynamic RAM Vanguard International Semiconductor

Image Gallery

VG36641641BT Datasheet Preview Page 2 VG36641641BT Datasheet Preview Page 3

VG36641641BT Distributor