VG3664321412BT - CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor

VG3664321412BT Datasheet Preview — Preview of VG3664321412BT PDF

Datasheet Details

Part number	VG3664321412BT
Manufacturer	Vanguard InterNational Semiconductor ↗
File Size	0.96 MB
Description	CMOS Synchronous Dynamic RAM
Datasheet	VG3664321412BT_VanguardInternationalSemiconductor.pdf

VG3664321412BT Product details

Description

Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.It is packaged in JEDEC standard pinout and standard plastic TSOP package.

Features

Single 3.3V ( ± 0.3V ) power supply.
High speed clock cycle time : 8/10 for LVTTL.
High speed clock cycle time : 8/10 for SSTL - 3.
Fully synchronous with all signals referenced to a positive clock edge.
Programmable CAS Iatency (2,3).
Programmable burst length (1,2,4,8,& Full page).
Programmable wrap sequence (Sequential/Interleave).
Automatic precharge and controlled precharge.
Auto refresh and self refresh modes.

📁 VG3664321412BT Similar Datasheet

VG3617161BT - 16Mb CMOS Synchronous Dynamic RAM (ETC)
VG380SA - VERTICAL GYRO SYSTEM (ACEINNA)
VG380ZA - VERTICAL GYROSCOPE (ACEINNA)

Other Datasheets by Vanguard International Semiconductor

VG36643241BT-10 - CMOS Synchronous Dynamic RAM
VG36643241BT-7 - CMOS Synchronous Dynamic RAM
VG36643241BT-8 - CMOS Synchronous Dynamic RAM
VG36641641BT - CMOS Synchronous Dynamic RAM
VG36641641DT - CMOS Synchronous Dynamic RAM
VG36644041DT - CMOS Synchronous Dynamic RAM

Published: Apr 16, 2005 |