VG3664321412BT Datasheet, Dynamic Ram, Vanguard International Semiconductor

Cmos synchronous dynamic ram

Vanguard International Semiconductor

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VG3664321412BT

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Vanguard International Semiconductor

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0.96 MB

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Description:

Cmos synchronous dynamic ram. Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, r

✔ VG3664321412BT Features

Single 3.3V ( ± 0.3V ) power supply
High speed clock cycle time : 8/10 for LVTTL
High speed clock cycle time : 8/10 for SSTL - 3
Fully synchronous with all signal

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VG3664321412BT CMOS Synchronous Dynamic RAM Vanguard International Semiconductor