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VG3664321412BT Datasheet - Vanguard International Semiconductor

CMOS Synchronous Dynamic RAM

VG3664321412BT Features

* Single 3.3V ( ± 0.3V ) power supply

* High speed clock cycle time : 8/10 for LVTTL

* High speed clock cycle time : 8/10 for SSTL - 3

* Fully synchronous with all signals referenced to a positive clock edge

* Programmable CAS Iatency (2,3)

* Programma

VG3664321412BT General Description

Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designed to operate fro.

VG3664321412BT Datasheet (0.96 MB)

Preview of VG3664321412BT PDF

Datasheet Details

Part number:

VG3664321412BT

Manufacturer:

Vanguard International Semiconductor

File Size:

0.96 MB

Description:

Cmos synchronous dynamic ram.

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VG3664321412BT CMOS Synchronous Dynamic RAM Vanguard International Semiconductor

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