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VS8205AS Dual N-Channel Advanced Power MOSFET

VS8205AS Description

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VS8205AS designed by the trench processing techniques to achieve extremely low on-resistance.

VS8205AS Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse D

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Datasheet Details

Part number
VS8205AS
Manufacturer
Vanguard Semiconductor
File Size
153.36 KB
Datasheet
VS8205AS-VanguardSemiconductor.pdf
Description
Dual N-Channel Advanced Power MOSFET

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Dual N-Channel Advanced Power MOSFET Vanguard Semiconductor
Vanguard Semiconductor VS8205AS-like datasheet