VSI007N06MS Datasheet, Mosfet, Vanguard Semiconductor

VSI007N06MS Features

• Mosfet
• N-Channel，5V Logic Level Control
• Enhancement mode
• Very low on-resistance RDS(on) @ VGS=4.5 V
• Fast Switching
• 100% Avalanche test

PDF File Details

Part number:

VSI007N06MS

Manufacturer:

Vanguard Semiconductor

File Size:

362.43kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet.

TAGS

VSI007N06MS

Vanguard Semiconductor

📁 Related Datasheet

VSI007N04MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .

VSI007N07MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-f.

VSI003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati.

VSI004N03MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; .

VSI004N10MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test.

VSI008N10MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® ⅡTechnology  100% Avalanche te.

VSI008N10MS5 - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® ⅡTechnology  100% Avalanche te.

VSI012N03MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; .

VSI013N08MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plat.

VSI013N10MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro.