• Part: VST025N10MS
  • Description: N-Channel Advanced Power MOSFET
  • Category: MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 705.55 KB
Download VST025N10MS Datasheet PDF
Vanguard Semiconductor
VST025N10MS
Features - N-Channel,5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching and High efficiency - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 100V/46A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 20 mΩ 22 mΩ I D 46 A TO-220AB Part ID VST025N10MS Package Type TO-220AB Marking 025N10M Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C...