* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
GFB50N03 Datasheet (106.28 KB)
GFB50N03
Vishay ↗ Intertechnology
106.28 KB
N-channel enhancement-mode mosfet.
GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13mΩ ID 50A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D G 0.160 (4.06) 0.19.
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