GFB50N03 - N-Channel Enhancement-Mode MOSFET

Vishay Intertechnology

Datasheet Details

Part number	GFB50N03
Manufacturer	Vishay Intertechnology
File Size	106.28 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GFB50N03_VishayIntertechnology.pdf

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30.

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Published: Oct 6, 2005 |