MBR40H100WT-F - High Performance Schottky Generation

Vishay Siliconix

Datasheet Details

Part number	MBR40H100WT-F
Manufacturer	Vishay Siliconix
File Size	202.08 KB
Description	High Performance Schottky Generation
Datasheet	MBR40H100WT-F_VishaySiliconix.pdf

Base 4 common cathode.
175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Fully lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level Anode T.

📁 MBR40H100WT-F Similar Datasheet

MBR40H100WT - Schottky Barrier Rectifier (Inchange Semiconductor)
MBR40H100WTG - Switch Mode Power Rectifier (ON Semiconductor)
MBR400100 - 400 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR400100CT - Silicon Power Schottky Diode (GeneSiC)
MBR400100CTR - Silicon Power Schottky Diode (GeneSiC)
MBR40020CT - 400 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR40020CTR - Schottky Power Diode (Naina Semiconductor)
MBR40030CT - 400 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)

Other Datasheets by Vishay Siliconix

Published: Jan 11, 2012 |