SI1050X
SI1050X is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Load Switch for Portable Devices
SC-89 (6-LEADS)
D 1 6 D
Marking Code
D 2 D
YY Lot Traceability and Date Code
Part # Code
Top View Ordering Information: Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 8 ±5 1.34b, c 1.07b, c 6 0.2b, c 0.236b, c 0.151b, c
- 55 to 150 Unit V
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. t 5 s Steady State Symbol Rth JA Typical 440 540 Maximum 530 650 Unit °C/W
Document Number: 73896 S10-2544-Rev. D, 08-Nov-10
.vishay. 1
Datasheet pdf
- http://..net/
.Data Sheet.co.kr
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.34 A VGS = 2.5 V, ID = 1.29 A VGS = 1.8 V, ID = 1.23 A VGS = 1.5 V, ID = 0.76 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge...
