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SI1912EDH Dual N-Channel MOSFET

SI1912EDH Description

Dual N-Channel 20 V (D-S) MOSFET Si1912EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450.

SI1912EDH Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs: 1.8 V Rated
* ESD Protected: 2000 V
* Thermally Enhanced SC-70 Package

SI1912EDH Applications

* Load Switching
* PA Switch
* Level Switch D1 D2 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Marking Code CA XX YY Lot Traceability and Date Code G1 Part # Code 1k 1k G2 Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen

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Dual N-Channel MOSFET Vishay Siliconix
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