SI3435DV Datasheet - Vishay Siliconix

SI3435DV P-Channel MOSFET

Si3435DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.036 @ VGS = - 4.5 V - 12 0.050 @ VGS = - 2.5 V 0.073 @ VGS = - 1.8 V ID (A) - 6.3 - 5.3 - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Condu.

SI3435DV_VishaySiliconix.pdf