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Si3433BDV - P-Channel MOSFET

Si3433BDV Description

P-Channel 1.8-V (G-S) MOSFET Si3433BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.042 at VGS = - 4.5 V - 20 0.057 at VGS = - 2.5 V .

Si3433BDV Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs: 1.8 V Rated
* Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top V iew 16 25 34 (4) S (3) G 2.85 mm Ordering Information: Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-fr

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P-Channel MOSFET Vishay
Vishay Si3433BDV-like datasheet