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SI3429EDV - MOSFET

SI3429EDV Description

www.vishay.com Si3429EDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX.0.0210 at VGS = -4.5 V 0.0240 .

SI3429EDV Features

* TrenchFET® power MOSFET
* 100 % Rg tested
* Built-in ESD protection - Typical ESD performance 3000 V

SI3429EDV Applications

* Power management for portable and consumer - Load switches - DC/DC converters G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t

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