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SI3590DV N- and P-Channel 30-V (D-S) MOSFET

SI3590DV Description

Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.077 at VGS = 4.5 V 0.120 at VGS .

SI3590DV Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Ultra Low RDS(on) N- and P-Channel for High Efficiency
* Optimized for High-Side/Low-Side
* Minimized Conduction Losses
* Compliant to RoHS Directive 2002/95/EC APPLICATI

SI3590DV Applications

* Portable Devices Including PDAs, Cellular Phones and Pagers D1 S2 G2 G1 2.85 mm Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P

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and P-Channel 30-V D-S MOSFET Vishay Siliconix
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