SI3861BDV Datasheet - Vishay Siliconix

SI3861BDV Load Switch

The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal E.

SI3861BDV Features

* ID (A) "2.3 "1.9 "1.7 rDS(on) (W) 0.075 @ VIN = 10 V 0.120 @ VIN = 5.0 V 0.145 @ VIN = 4.5 V D D D D D D D 4.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchFETr 4.5 to 20-V Input 1.5 to 8 -V Logic Level Control Low Profile, Small Footprint TSOP-6 Package 3000-V ESD Protection On Input S

SI3861BDV_VishaySiliconix.pdf