SI4336DY Datasheet, Mosfet, Vishay Siliconix

SI4336DY Features

• Mosfet
• Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology
• Qg Optimized
• 100 % Rg Tested APPLICATIONS
• Synchronous Buck L

PDF File Details

Part number:

SI4336DY

Manufacturer:

Vishay ↗ Siliconix

File Size:

79.65kb

Download:

📄 Datasheet

Description:

N-channel 30-v (d-s) mosfet.

SI4336DY Application

• Applications
• Synchronous Buck Low-Side - Notebook - Server - Workstation
• Synchronous Rectifier, POL D G S N-Channel MOSFET ABSO

TAGS

SI4336DY

Vishay Siliconix

📁 Related Datasheet

SI4330DY - Dual N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)
Si4330DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) .

SI4300 - Dual-Band Monolithic Power Amplifier System (Silicon Laboratories)
Si4300 Dual-Band Monolithic Power Amplifier System Description The Si4300 is a plete, monolithic, high-power, and high-performance power amplifier .

SI4300DY - N-Channel 30-V (D-S) Fast Switching MOSFET (Vishay)
Si4300DY Vishay Siliconix N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @.

SI4300T - Tri-Band Monolithic Power Amplifier System (Silicon Laboratories)
Si4300T Tri-Band Monolithic Power Amplifier System Description The Si4300T is a plete, monolithic, high-power, and high-performance power amplifier.

SI4308DY - Dual N-Channel 30-V (D-S) MOSFET (Vishay)
Si4308DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (.

Si4313-B1 - LOW-COST ISM RECEIVER (Silicon Laboratories)
Si4313-B1 Si4313 LOW-COST ISM RECEIVER Features  Frequency range = 240–960 MHz  Programmable RX BW  Sensitivity = –118 dBm 2.6–620 kHz  Low .

Si4320DY - N-Channel 30-V (D-S) MOSFET (Vishay)
N-Channel 30-V (D-S) MOSFET Si4320DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.003 at VGS = 10 V 30 0.004 at VGS = 4.5 V ID (A) 25 .

Si4322DY - N-Channel MOSFET (Vishay)
Si4322DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0085 at VGS = 10 V 0.0125 at VG.

SI4340DY - Dual N-Channel MOSFET (Vishay Siliconix)
Si4340DY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 Channel-2 20 0.012 .

Si4348DY - N-Channel 30-V (D-S) MOSFET (Vishay)
Si4348DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0125 at VGS = 10 V 0.014 at VGS = 4.5 V .