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SI4336DY N-Channel 30-V (D-S) MOSFET

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Description

N-Channel 30-V (D-S) MOSFET Si4336DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 0.00325 at VGS = 10 V 0.0042 at VGS = 4.5 V ID (A) .

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Features

* Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology
* Qg Optimized

Applications

* Synchronous Buck Low-Side - Notebook - Server - Workstation
* Synchronous Rectifier, POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Conti

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