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SI4366DY N-Channel MOSFET

SI4366DY Description

New Product N-Channel 30-V (D-S) MOSFET Si4366DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0048 at VGS = 10 V 30 0.0055 at VGS = 4.5.

SI4366DY Features

* TrenchFET® Power MOSFET
* Optimized for “Low Side” Synchronous Rectifier Operation

SI4366DY Applications

* DC/DC Converters
* Synchronous Rectifiers D Available RoHS
* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Cur

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N-Channel MOSFET Vishay Siliconix
Vishay Siliconix SI4366DY-like datasheet