Si4362-C - HIGH-PERFORMANCE LOW-CURRENT RECEIVER
(Silicon Laboratories)
Si4362-C
HIGH-PERFORMANCE, LOW-CURRENT RECEIVER
Features
Frequency
Excellent selectivity performance
range = 142–1050 MHz
69 dB adjacent c.
Si4362BDY - N-Channel MOSFET
(Vishay)
N-Channel 30-V (D-S) MOSFET
Si4362BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0046 at VGS = 10 V 0.0054 at VGS = 4.5 V
ID (A)a.
SI4362DY - N-Channel MOSFET
(Vishay Siliconix)
Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (.
SI4366DY - N-Channel MOSFET
(Vishay Siliconix)
New Product
N-Channel 30-V (D-S) MOSFET
Si4366DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.0048 at VGS = 10 V 30
0.0055 at VGS = 4.5.
SI4300 - Dual-Band Monolithic Power Amplifier System
(Silicon Laboratories)
Si4300
Dual-Band Monolithic Power Amplifier System
Description
The Si4300 is a plete, monolithic, high-power, and high-performance power amplifier .
SI4300DY - N-Channel 30-V (D-S) Fast Switching MOSFET
(Vishay)
Si4300DY
Vishay Siliconix
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0185 @.